Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-11-01

2005-11-01

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S532000, C257S751000, C257S767000

Reexamination Certificate

active

06960800

ABSTRACT:
A lower electrode is formed on a substrate, a capacitive insulating film is formed out of a ferroelectric film on the lower electrode, and an upper electrode is formed on the capacitive insulating film. A contact layer is formed on the upper electrode. The contact layer is either a single-layer film made of a metal oxide or a metal nitride or a multilayer structure made up of metal oxide and metal nitride films. An insulating film is formed to cover the lower electrode, capacitive insulating film, upper electrode and contact layer. A contact hole is opened through the insulating film and the contact layer to reach the upper electrode. A metal interconnect, which is filled in the contact hole and connected to the upper electrode, is formed on a part of the insulating film.

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European Search Report, Mar. 15, 2001, 3 pages.

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