Ferroelectric memory configuration having successively...

Details Ferroelectric memory configuration having successively... Ferroelectric memory configuration having successively...

2005-11-22

2005-11-22

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Systems using particular element

Ferroelectric

Reexamination Certificate

active

06967859

ABSTRACT:
A semiconductor memory of this invention contains a memory cell block including a plurality of ferroelectric capacitors successively connected to one another along a bit line direction each for storing a data in accordance with displacement of polarization of a ferroelectric film thereof, and a reading transistor whose gate is connected to one end of the successively connected plural ferroelectric capacitors for reading a data by detecting the displacement of the polarization of the ferroelectric film of a ferroelectric capacitor selected from the plural ferroelectric capacitors. A set line is connected to the other end of the successively connected plural ferroelectric capacitors. A bit line is connected to the drain of the reading transistor at one end thereof. A reset line is connected to the source of the reading transistor at one end thereof. A plurality of word lines respectively corresponding to the plural ferroelectric capacitors are provided perpendicularly to the bit line, so as to select a ferroelectric capacitor from the plural ferroelectric capacitors for data write or data read.

REFERENCES:
patent: 6151242 (2000-11-01), Takashima
patent: 6198652 (2001-03-01), Kawakubo et al.
patent: 6366488 (2002-04-01), Zambrano et al.
patent: 11-177036 (1999-07-01), None
patent: 2000-22010 (2000-01-01), None
patent: 2000-156472 (2000-06-01), None
Jan. 7, 2005 First Office Action for Application No. CN-01120041.3 from State Intellectual Property Office of People's Republic of China.

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