Method of forming a polysilicon layer comprising...

Details Method of forming a polysilicon layer comprising... Method of forming a polysilicon layer comprising...

2005-11-08

2005-11-08

Dang, Phuc T. (Department: 2818)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Polycrystalline semiconductor

C438S647000

Reexamination Certificate

active

06962861

ABSTRACT:
A method of forming a flash memory cell includes providing a substrate, forming an oxide layer over the substrate, forming a polysilicon floating gate over the oxide layer including providing a bottom seed layer having microcrystalline polysilicon, providing an upper amorphous silicon layer over the bottom seed layer, and annealing the upper amorphous silicon layer, providing an inter-poly dielectric layer over the floating gate, and forming a polysilicon control gate over the inter-poly dielectric layer.

REFERENCES:
patent: 5981339 (1999-11-01), Chang et al.
patent: 6383899 (2002-05-01), Voutsas
patent: 6667525 (2003-12-01), Rhee et al.
patent: 6713364 (2004-03-01), Kirchhoff
T.C. Ong, et al., “Erratic Erase in ETOX™ Flash Memory Array,” IEEE VLSI Symposium, 1993, pp. 83-84.
V. Subramanian et al., “A Novel Technique for 3-D Integration: Ge-seeded Laterally Crystallized TFTs”, IEEE VLSI Symposium, 1997.
Tuung Luoh et al., “Single-Wafer Polysilicon Engineering for the Improvement of Over Erase in a 0.18-μm Floating-Gate Flash Memory,” IEEE Transactions on Semiconductor Manufacturing, vol. 16, No. 2, May 2003, pp. 155-164.

Affiliated with

Also associated with

Rating

Method of forming a polysilicon layer comprising... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a polysilicon layer comprising..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a polysilicon layer comprising... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3465680