Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-06-28
2005-06-28
Le, Thao P. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S314000, C257S315000, C257S316000
Reexamination Certificate
active
06911704
ABSTRACT:
A memory cell array comprises a two dimensional array of memory cells fabricated on a semiconductor substrate. The memory cells are arranged in a plurality of rows and a plurality columns. Each column of memory cells comprising a plurality of alternating channel regions and source/drain regions. A conductive interconnect is positioned above each source/drain region and coupled to only one other source/drain region. The one other source/drain region is in a second column that is adjacent to the column. The conductive interconnects are positioned such that every other conductive interconnect connects to the adjacent column to a right side of the column and every other conductive interconnect connects to adjacent column to the left side of the column. A plurality of source/drain control lines extends between adjacent columns of memory cells and electrically couples to each conductive interconnect that couples between the adjacent columns.
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International Search Report for corresponding Application No. PCT/US2004/030415 mailed Jan. 25, 2005.
Fastow Richard
Haddad Sameer S.
Randolph Mark W.
Thurgate Timothy
Advanced Micro Devices , Inc.
Le Thao P.
Renner , Otto, Boisselle & Sklar, LLP
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