Integrated semiconductor device having co-planar device...

Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – With provision for cooling the housing or its contents

Reexamination Certificate

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C257S724000

Reexamination Certificate

active

06963132

ABSTRACT:
The present invention provides a method of forming an integrated semiconductor device, and the device so formed. An active surface of at least two semiconductor devices, such as semiconductor chips, are temporarily mounted onto an alignment substrate. A support substrate is affixed to a back surface of the devices using a conformable bonding material, wherein the bonding material accommodates devices having different dimensions. The alignment substrate is then removed leaving the devices wherein the active surface of the devices are co-planar.

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