Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-08-30
2005-08-30
Lebentritt, Michael (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S632000, C438S691000, C438S693000, C438S725000
Reexamination Certificate
active
06936534
ABSTRACT:
A method for the post-etch cleaning of multi-level, damascene structures which minimizes, or substantially prevents, localized corrosion of underlying copper metallization comprises subjecting an intermediate structure in the fabrication of a multi-level, damascene structure, which structure includes an underlying copper metallization layer and an opening etched therein which exposes at least a portion of the underlying copper metallization layer, to an aqueous or acidic wash solution, in an environment substantially shielded from ambient light, to substantially remove any post-etch residues which may be present on the structure. In one embodiment, the aqueous or acidic wash solution has a nonzero static etch rate when applied to both the copper and conventional dielectric materials, e.g., silicon dioxide.
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Lebentritt Michael
Micro)n Technology, Inc.
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