MOS transistor device

Details MOS transistor device MOS transistor device

2005-06-28

2005-06-28

Chaudhari, Chandra (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S409000

Reexamination Certificate

active

06911693

ABSTRACT:
In order to form a MOS transistor device with a particularly low on resistance with a good avalanche strength at the same time, it is proposed to define the position and/or the configuration of avalanche breakdown regions by a variation and/or a course of the width and/or of the depth of the respective trench structure and/or of the respective mesa regions.

REFERENCES:
patent: 5072266 (1991-12-01), Bulucea et al.
patent: 5742076 (1998-04-01), Sridevan et al.
patent: 6037628 (2000-03-01), Huang
patent: 6084264 (2000-07-01), Darwish
patent: 6140678 (2000-10-01), Grabowski et al.
patent: 6429481 (2002-08-01), Mo et al.
patent: 6566708 (2003-05-01), Grover et al.

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