Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-08-23

2005-08-23

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S374000, C257S501000

Reexamination Certificate

active

06933565

ABSTRACT:
A silicon nitride film is formed between interlayer insulating films covering an upper surface of an element formed on a surface of a semiconductor layer. With this structure, a semiconductor device comprising an isolation insulating film of PTI structure, which suppresses a floating-body effect and improves isolation performance and breakdown voltage, and a method of manufacturing the semiconductor device can be obtained.

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