Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2005-11-01
2005-11-01
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C257S410000
Reexamination Certificate
active
06960539
ABSTRACT:
There is provided a substrate for electronic devices, in which treatment for forming a reconstructed surface or a hydrogen-terminated surface on a substrate is not necessary, and a buffer layer formed on the substrate can be epitaxially grown in the (100) orientation, and a manufacturing method therefor. The substrate100for electronic devices comprises; a substrate11consisting of silicon, and a first buffer layer12and a second buffer layer13having a fluorite structure, a first oxide electrode layer14having a layered perovskite structure, and a second oxide electrode layer15having a simple perovskite structure, which are epitaxially grown and laminated in this order on a film-forming surface of the substrate11.The first buffer layer12is grown epitaxially at a higher rate than the growth rate of SiO2, by irradiating a metallic plasma onto a natural oxide film in an SiO sublimation area.
REFERENCES:
patent: 5155658 (1992-10-01), Inam et al.
patent: 5173474 (1992-12-01), Connell et al.
patent: 5270298 (1993-12-01), Ramesh
patent: 5358925 (1994-10-01), Neville Connell et al.
patent: 5416062 (1995-05-01), Harada et al.
patent: 5801105 (1998-09-01), Yano et al.
patent: 5810923 (1998-09-01), Yano et al.
patent: 5828080 (1998-10-01), Yano et al.
patent: 6045626 (2000-04-01), Yano et al.
patent: 6096434 (2000-08-01), Yano et al.
patent: 6121647 (2000-09-01), Yano et al.
patent: 6232242 (2001-05-01), Hata et al.
patent: A 6-097452 (1994-04-01), None
patent: A 8-109099 (1996-04-01), None
patent: A 8-255790 (1996-10-01), None
patent: A 8-264524 (1996-10-01), None
patent: A 9-110592 (1997-04-01), None
patent: A 9-263494 (1997-10-01), None
patent: A 10-017394 (1998-01-01), None
patent: A 10-107216 (1998-04-01), None
patent: A 10-265948 (1998-10-01), None
patent: A 11-026296 (1999-01-01), None
patent: A 2000-101345 (2000-04-01), None
patent: A 2000-332569 (2000-11-01), None
patent: A 2001-077102 (2001-03-01), None
patent: A 2001-122698 (2001-05-01), None
patent: A 2002-009358 (2002-01-01), None
Fork et al., “Epitaxial yttria-stabilized zirconia on hydrogen-terminated Si by pulsed laser deposition”, Appl. Phys. Letter 57, Sep. 10, 1990, pp 1137-1139.
Haakenaasen et al., “High quality crystalline YBa2Cu3O7δfilms on thin silicon substrates”, Appl. Phys. Lett. 64, Mar. 21, 1994, pp 1573-1575.
Hou et al., “Structure and properties of epitaxial Ba0.5Sr0.5TiO3/SrRuO3/ZrO2heterostructure on Si grown by off-axis sputtering”, Appl. Phys. Lett. 67, Sep. 4, 1005, pp 1387-1389.
Pignolet A., et al., “Large Area Pulsed Laser Deposition of Aurivillus-type Layered Perovskite Thin Films”, Ferrorelectrics, Overseas Published Associations, Amsterdam, NL, , vol. 202, No. 1-4, 1997, pp. 285-298.
Mechin L. et al., “A combined x-ray specular reflectivity and spectroscopic ellipsometry study of CeO2/yttria-stabilized-zirconia bilayers on Si(100) substrates”, Journal of Applied Physics, American Institute of Physics, New York, US, vol. 84, No. 9, Nov. 1, 1998, pp. 4935-4940.
Matthee T., et al., “Orientation relationships of epitaxial oxide buffer layers on silicon (100) for high-temperature superconducting Yba2Cu307-x films”, Applied Physics Letters USA, vol. 61, No. 10, Sep. 7, 1992, pp. 1240-1242.
Higuchi Takamitsu
Iwashita Setsuya
Miyazawa Hiromu
Nelms David
Oliff & Berridg,e PLC
Seiko Epson Corporation
Vu David
LandOfFree
Substrate for electronic devices, manufacturing method... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Substrate for electronic devices, manufacturing method..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Substrate for electronic devices, manufacturing method... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3461730