Method for fabricating semiconductor device

Details Method for fabricating semiconductor device Method for fabricating semiconductor device

2005-11-08

2005-11-08

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S687000, C438S709000, C438S633000, C438S672000

Reexamination Certificate

active

06962874

ABSTRACT:
Disclosed is a method for fabricating a semiconductor device. The method comprises the steps of: sequentially forming a first anti-reflection layer and a first photoresist film on a substrate; forming a first image layer; forming a second anti-reflection layer and a second photoresist film; forming a second image layer which opens wider than the first image layer; supplying oxygen plasma to a resultant in order to transfer a pattern of the second image layer on the second anti-reflection layer and to transfer a pattern of the first image layer on the first anti-reflection layer, thereby forming an opening; forming a metal layer; forming a metal pattern to fill the opening; and removing the second image layer, the second anti-reflection layer, the first image layer, and the first anti-reflection layer.

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