Polysilicon hard mask etch defect particle removal

Details Polysilicon hard mask etch defect particle removal Polysilicon hard mask etch defect particle removal

2005-02-08

2005-02-08

Huff, Mark F. (Department: 1756)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Making electrical device

C430S311000, C430S322000, C438S736000, C438S737000, C438S743000, C438S744000, C216S096000, C216S103000, C216S104000

Reexamination Certificate

active

06852472

ABSTRACT:
The removal of defect particles that may be created during polysilicon hard mask etching, and that are embedded within the polysilicon layer, is disclosed. Oxide is first grown in the polysilicon layer exposed through the patterned hard mask layer, so that the defect particle becomes embedded within the oxide. Oxide growth may be accomplished by rapid thermal oxidation (RTO). The oxide is then exposed to an acidic solution, such as hydrofluoric (HF) acid, to remove the oxide and the embedded defect particle embedded therein.

REFERENCES:
patent: 6689665 (2004-02-01), Jang et al.
patent: 20030068886 (2003-04-01), Morgan

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