Magnetoresistive memory apparatus

Details Magnetoresistive memory apparatus Magnetoresistive memory apparatus

2005-06-07

2005-06-07

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S303000, C257S306000, C257S324000, C438S003000, C438S240000

Reexamination Certificate

active

06903400

ABSTRACT:
A magnetoresistive memory apparatus with a semiconductor substrate having a plurality of intersecting, non-contacting word lines and bit lines constituting a matrix, and a plurality of ferromagnetic tunnel junction devices located adjacent each intersection of the plurality of lines, each junction device having, disposed one upon another via insulating layers, free layers having variable magnetization directions and fixed magnetization layers having fixed magnetization directions, with magnetized information being written to the memory device at an intersection selected by magnetization electric currents supplied to the lines, the magnetized information read out by detecting the resistance variance of electric currents flowing through the memory device due to the tunnel effect. The plurality of junction devices deviate from the intersections of the plurality of lines, and between the lines are non-contacting free layer extended portions being extensions from only the free layer, to shorten the interval there between.

REFERENCES:
patent: 6518588 (2003-02-01), Parkin et al.
patent: 6552926 (2003-04-01), Komori
patent: 2002-217382 (2002-08-01), None
patent: 2002-299584 (2002-10-01), None
patent: 2002-367365 (2002-12-01), None

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