Back-biased face target sputtering

Details Back-biased face target sputtering Back-biased face target sputtering

2005-11-08

2005-11-08

Versteeg, Steven (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S298060, C204S298160, C204S298230

Reexamination Certificate

active

06962648

ABSTRACT:
A facing targets sputtering device for semiconductor fabrication includes an air-tight chamber in which an inert gas is admittable and exhaustible; a pair of target plates placed at opposite ends of said air-tight chamber respectively so as to face each other and form a plasma region therebetween; a pair of magnets respectively disposed adjacent to said target plates such that magnet poles of different polarities face each other across said plasma region thereby to establish a magnetic field of said plasma region between said target plates; a substrate holder disposed adjacent to said plasma region, said substrate holder adapted to hold a substrate on which an alloyed thin film is to be deposited; and a back-bias power supply coupled to the substrate holder.

REFERENCES:
patent: 4880515 (1989-11-01), Yoshikawa et al.
patent: 5000834 (1991-03-01), Yoshikawa
patent: 5122252 (1992-06-01), Latz et al.
patent: 5334302 (1994-08-01), Kubo et al.
patent: 5415754 (1995-05-01), Manley
patent: 6342133 (2002-01-01), D'Couto et al.
patent: 6482329 (2002-11-01), Takahashi et al.
patent: 2001/0013470 (2001-08-01), Hirata et al.
patent: 2002/0074225 (2002-06-01), Shi et al.

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