Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-08-02
2005-08-02
Eckert, George (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S368000, C257S369000, C257S500000
Reexamination Certificate
active
06924535
ABSTRACT:
A semiconductor device, having a high breakdown voltage transistor and a low breakdown voltage transistor in a common substrate with different driving voltages, includes a semiconductor substrate of a first conductivity type, a first triple well formed in the semiconductor substrate and having a first well of a second conductivity type and a second well of the first conductivity type formed within the first well, a second triple well formed in the semiconductor substrate and having a third well of the second conductivity type and a fourth well of the first conductivity type formed within the third well, a low breakdown voltage transistor of the second conductivity type formed at the second well, and a high breakdown voltage transistor of the second conductivity type formed at the fourth well. The first well of the first triple well can have an impurity concentration higher than an impurity concentration of the third well of the second triple well.
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Eckert George
Harness & Dickey & Pierce P.L.C.
Lee Eugene
Seiko Epson Corporation
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