Non-volatile semiconductor memory device with first and...

Details Non-volatile semiconductor memory device with first and... Non-volatile semiconductor memory device with first and...

2005-11-29

2005-11-29

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S315000, C257S316000

Reexamination Certificate

active

06969885

ABSTRACT:
A non-volatile semiconductor memory device comprising at least: a first electrode containing silicon atoms; and a second electrode formed on the first electrode through an insulating film, wherein the insulating film is formed of at least two layers of: a lower silicon nitride film on the first electrode side obtained by nitriding the first electrode; and an upper silicon nitride film formed on the lower silicon nitride film according to a chemical vapor deposition method, and at least a part of the lower silicon nitride film contains a rare gas element at an area density of 1010cm−2or more.

REFERENCES:
patent: 2001-160555 (2001-06-01), None

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