Designing method and a manufacturing method of an electronic...

Computer-aided design and analysis of circuits and semiconductor – Nanotechnology related integrated circuit design

Reexamination Certificate

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C716S030000

Reexamination Certificate

active

06854095

ABSTRACT:
A designing method of an electronic device is provided. An STI structure, a wiring structure and the like defines a first area ratio range and a second area ratio range that are permissible in order to obtain satisfactory polishing results. A region to be polished is divided into first smaller areas, an area ratio of each of which is adjusted to meet the first area ratio range. The region to be polished is divided into second smaller areas, which are larger than the first smaller areas. An area ratio of each is adjusted to meet the second area ratio range, thereby providing satisfactory planarity of the region to be polished without producing depressions due to erosion caused by differing polishing speeds caused by differing densities of the regions to be polished.

REFERENCES:
patent: 6317353 (2001-11-01), Ikeda et al.
patent: 6682398 (2004-01-01), Meyer
patent: 20020157076 (2002-10-01), Asakawa
patent: 20020162082 (2002-10-01), Cwynar et al.
patent: 20030070149 (2003-04-01), Mizumasa
patent: 09102539 (1997-04-01), None
patent: 101730035 (1998-06-01), None
patent: 2001007114 (2001-01-01), None

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