Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-08
2005-02-08
Lebentritt, Michael S. (Department: 2824)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S298000, C257S314000, C257S326000
Reexamination Certificate
active
06853035
ABSTRACT:
An active negative differential resistance element (an NDR FET) and a memory device (such as an SRAW using such elements is disclosed Soft error rate (SER) performance for NDR FETs and such memory devices are enhanced by adjusting a location of charge traps in a charge trapping layer that is responsible for effectuating an NDR behavior. Both an SER and a switching speed performance characteristic can be tailored by suitable placement of the charge traps.
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Bever Hoffman & Harms LLP
Harms Jeanette S.
Lebentritt Michael S.
Menz Douglas
Synopsys Inc.
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