Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-03-22
2005-03-22
Zarabian, Amir (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S410000, C257S411000, C257S637000, C257S638000, C257S640000
Reexamination Certificate
active
06870225
ABSTRACT:
An improved transistor structure that decreases source/drain (S/D) resistance without increasing gate-to-S/D capacitance, thereby increasing device operation. S/D structures are formed into recesses formed on a semiconductor wafer through a semiconductor layer and a first layer of a buried insulator having at least two layers. A body is formed from the semiconductor layer situated between the recesses, and the body comprises a top body surface and a bottom body surface that define a body thickness. Top portions of the S/D structures are within and abut the body thickness. An improved method for forming the improved transistor structure is also described and comprises: forming recesses through a semiconductor layer and a first layer of a buried insulator so that a body is situated between the recesses; and forming S/D structures into the recesses so that top portions of the S/D structures are within and abut a body thickness.
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IBM Technical Disclosure Bulletin, vol. 25, No. 8, Jan. 1983, pp. 4065-4066, Recessed Source and Drain Gallium Arsenide MESFET, T.L. Andrade.
Bryant Andres
Jaffe Mark D.
International Business Machines - Corporation
Lewis Monica
Sabo William D.
Schmeiser Olsen & Watts
Zarabian Amir
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