Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-02-22
2005-02-22
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S059000, C257S072000, C257S410000, C257S411000, C257S639000, C257S649000
Reexamination Certificate
active
06858898
ABSTRACT:
An object of the present invention is to prevent the deterioration of a TFT (thin film transistor). The deterioration of the TFT by a BT test is prevented by forming a silicon oxide nitride film between the semiconductor layer of the TFT and a substrate, wherein the silicon oxide nitride film ranges from 0.3 to 1.6 in a ratio of the concentration of N to the concentration of Si.
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Hayakawa Masahiko
Sakama Mitsunori
Toriumi Satoshi
Cook Alex McFarron Manzo Cummings & Mehler, Ltd.
Flynn Nathan J.
Sefer Ahmed N.
Semiconductor Energy Laboratory Co,. Ltd.
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