Semiconductor device and manufacturing method of the same

Details Semiconductor device and manufacturing method of the same Semiconductor device and manufacturing method of the same

2005-08-16

2005-08-16

Wojciechowicz, Edward (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S369000, C257S370000, C257S520000, C257S521000

Reexamination Certificate

active

06930360

ABSTRACT:
A semiconductor device having a semiconductor layer, includes: a first impurity atom having a covalent bond radius larger than a minimum radius of a covalent bond of a semiconductor constituent atom of a semiconductor layer; and a second impurity atom having a covalent bond radius smaller than a maximum radius of the covalent bond of the semiconductor constituent atom; wherein the first and second impurity atoms are arranged in a nearest neighbor lattice site location and at least one of the first and second impurity atoms is electrically active.

REFERENCES:
patent: 5668397 (1997-09-01), Davis et al.
patent: 55-25492 (1980-07-01), None
patent: 55-28215 (1980-07-01), None
patent: 2002-76332 (2002-03-01), None
patent: 2002-368212 (2002-12-01), None
Jun Yamauchi, et al., “First-Principles Study on Indium atoms in Silicon”, 26thInternational Conference on Physics of Semiconductors Abstract, Jul. 29, 2002, p. 115.

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