MOSFET for an open-drain circuit and semiconductor...

Details MOSFET for an open-drain circuit and semiconductor... MOSFET for an open-drain circuit and semiconductor...

2005-10-11

2005-10-11

Vu, Hung (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S343000

Reexamination Certificate

active

06953969

ABSTRACT:
In a conventional N-channel MOSFET for an open-drain circuit, when a positive static electric charge is applied to its drain, there is no route by way of which to discharge the static electric charge, resulting in a rather low static withstand voltage. To overcome this, according to the invention, an open-drain N-channel MOSFET has a drain region formed of an N-type semiconductor layer, a P-type impurity diffusion layer formed within the drain region, two high-concentration N-type impurity diffusion layers formed within the drain region so as to sandwich the P-type impurity diffusion layer, and a drain electrode connected to the P-type impurity diffusion layer and to the two high-concentration N-type impurity diffusion layers. When a positive static electric charge is applied to the drain, a parasitic transistor appears that forms a route by way of which the static electric charge is discharged.

REFERENCES:
patent: 6576934 (2003-06-01), Cheng et al.
patent: 6724043 (2004-04-01), Ekkanath Madathil
patent: 3204168 (2001-06-01), None

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