Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Reexamination Certificate
2005-11-29
2005-11-29
Chen, Bret (Department: 1762)
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
C427S255380
Reexamination Certificate
active
06969539
ABSTRACT:
Metal silicates or phosphates are deposited on a heated substrate by the reaction of vapors of alkoxysilanols or alkylphosphates along with reactive metal amides, alkyls or alkoxides. For example, vapors of tris-(ter-butoxy)silanol react with vapors of tetrakis(ethylmethylamido)hafnium to deposit hafnium silicate on surfaces heated to 300° C. The product film has a very uniform stoichiometry throughout the reactor. Similarly, vapors of diisopropylphosphate react with vapors of lithium bis(ethyldimethylsilyl)amide to deposit lithium phosphate films on substrates heated to 250° C. supplying the vapors in alternating pulse produces these same compositions with a very uniform distribution of thickness and excellent step coverage.
REFERENCES:
patent: 4386117 (1983-05-01), Gordon
patent: 4474642 (1984-10-01), Nakane et al.
patent: 4723978 (1988-02-01), Clodgo et al.
patent: 4792463 (1988-12-01), Okada et al.
patent: 5389401 (1995-02-01), Gordon
patent: 5403630 (1995-04-01), Matsui et al.
patent: 5710075 (1998-01-01), Tseng
patent: 5922787 (1999-07-01), Kondo et al.
patent: 6090442 (2000-07-01), Klaus et al.
patent: 6335288 (2002-01-01), Kwan et al.
patent: 6339004 (2002-01-01), Kim
patent: 6342432 (2002-01-01), Wang
patent: 6395209 (2002-05-01), Yoshida et al.
patent: 6534395 (2003-03-01), Werkhoven et al.
patent: 6867152 (2005-03-01), Hausmann et al.
patent: 2002/0004281 (2002-01-01), Lee et al.
patent: 2002/0018849 (2002-02-01), George et al.
patent: 2002/0102814 (2002-08-01), Olsen
patent: 2003/0015764 (2003-01-01), Raaijmakers et al.
patent: 2004/0018694 (2004-01-01), Lee et al.
patent: 43/16883 (1994-11-01), None
patent: 0560617 (1993-09-01), None
patent: 1067595 (2001-01-01), None
patent: 1067595 (2002-01-01), None
patent: 04359515 (1992-11-01), None
patent: 2002093803 (2002-03-01), None
patent: 2002093804 (2002-03-01), None
patent: 97/38355 (1997-10-01), None
patent: 98/15669 (1998-04-01), None
patent: 99/29924 (1999-06-01), None
patent: 99/29926 (1999-06-01), None
patent: WO-01/27347 (2001-04-01), None
patent: 01/45158 (2001-06-01), None
patent: 02/27063 (2002-04-01), None
Lee, et al., “Mass Production Worthy HfO2-Al2O3Laminate Capacitor Technology using Hf Liquid Precursor for Sub-100nm DRAMs,” Presented at IEEE IEDM (International Electronic Devices Meeting), San Francisco, CA, Dec. 9-11 (2002), pp 1-4.
Park, et al., “Mass-Productive Ultra-Low Temperature ALD SiO2Process Promising for Sub-90nm Memory and Logic Devices,” Presented at IEEE IEDM (International Electron Devices Meeting), San Francisco, CA, Dec. 9-11 (2002), pp 1-4.
Coltrin, et al., “Chemical kinetics in chemical vapor deposition: growth of silicon dioxide from tetraethoxysilane (TEOS),”Thin Solid Films, vol. 365, pp. 251-263 (2000).
Ikeda, et al., “Ozone/Organic-Source APCVD for USLI Reflow Glass Films,”NEC Research&Development, No. 94, pp. 1-7 (1989).
Hausmann, et al., “Rapid Vapor Deposition of Highly Conformal Silica Nanolaminates,”Science, vol. 298, pp. 402-406 (2002).
Kingon, et al., “Alternative dielectrics to silicon dioxide for memory and logic devices,”Nature, vol. 406, pp. 1032-1038, (2000).
Ritala, “Advanced ALE processes of amorphous and polycrystalline films,”Applied Surface Science, vol. 112, pp. 223-230, (1997).
Ritala, et al., “Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources,”Science, vol. 288, pp. 319-321, (2000).
Backer, et al., “Esters Mixtes De L'Acide Tetrathio Orthosilicique,”Rec. Trav. Chim.,vol. 61, pp. 500-512, (1942).
Okamoto, et al., “Convenient Synthetic Route To Mono-Or Dialkyl Phosphate From Inorganic Phosphorus Acids,”Phosphorus, Sulfur and Silicon, vol. 55, pp. 195-200 (1991).
McIvor, et al., “Preparation and Toxicity of Some Alkyl Thiopyrophosphates,”Canadian J. Chemistry, vol. 34, pp. 1825-1827 (1956).
Zwierzak, et al., “Organophosphorus Esters—tButyl As Protecting Group In Phosphorylation Via Nucleophilic Displacement,”Tetrahedron, vol. 27, pp. 3163-3170 (1971).
George, et al., “Atomic Layer Controlled Depositon of SiO2 and AI2O3 Using ABAB . . . binary reaction sequence chemistry,”Appl. Surf. Sci.,82/83, pp. 460-467 (1994).
Gasser, et al., “Qusai-Monolayer Deposition of Silicon Dioxide,”Thin Solid Films, vol. 250, pp. 213-218 (1994).
Klaus, et al., “Atomic Layer Deposition of SiO2 at Room Temperature Using NH3-catalyzed Sequential Surface Reactions,”Surf. Sci.,vol. 447, pp. 81-90 (2000).
Ferguson, et al., “Atomic Layer Deposition of A12O3 and SIO2 on BN Particles Using Sequential Surface Reactions,”Applied Surface Science, vols. 162-163, pp. 280-292, (2000).
Yamaguchi, et al., “Atomic Layer Chemical-Vapor-Deposition of Silicon Dioxide Films with an Extremely Low Hydrogen Content,”Applied Surface Science, vols. 130-132, pp. 202-207 (1998).
Morishita, et al., “New Substances for Atomic-Layer Deposition of Silicon Dioxide,”J. Non-Crystalline Solids, vol. 187, pp. 66-69 (1995).
Klaus, et al., “Atomic Layer Deposition of SiO2 Using Catalyzed and Uncatalyzed Self-Limiting Surface Reactions,”Surface Review and Letters, vol. 6(3), pp. 435-448 (1999).
Ferguson, et al., “Atomic Layer Deposition of SiO2 Fims on BN Particles Using Sequential Surface Reactions,”Chem. Mater, vol. 12, pp. 3472-3480 (2000).
Becker Jill
Gordon Roy G.
Hausmann Dennis
Suh Seigi
Chen Bret
President and Fellows of Harvard College
Wilmer Cutler Pickering Hale and Dorr LLP
LandOfFree
Vapor deposition of metal oxides, silicates and phosphates,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Vapor deposition of metal oxides, silicates and phosphates,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Vapor deposition of metal oxides, silicates and phosphates,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3454603