Photo-assisted method for semiconductor fabrication

Details Photo-assisted method for semiconductor fabrication Photo-assisted method for semiconductor fabrication

2005-08-16

2005-08-16

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S720000, C438S727000, C438S711000

Reexamination Certificate

active

06930041

ABSTRACT:
The present invention provides a processing system comprising a remote plasma activation region for formation of active gas species, a transparent transfer tube coupled between the remote activation region and a semiconductor processing chamber, and a source of photo-energy for maintaining activation of the active species or providing photo-energy for a non-plasma species during transfer through the transparent tube to the processing chamber. The source of photo-energy preferably includes an array of UV lamps. Additional UV lamps may also be used to further sustain active species and assist processes by providing additional in-situ energy through a transparent window of the processing chamber. The system can be utilized for processes such as layer-by-layer annealing and deposition and also removal of contaminants from deposited layers.

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