Process for structuring a photoresist layer on a...

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device

Reexamination Certificate

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C430S330000

Reexamination Certificate

active

06858376

ABSTRACT:
In a negative or positive photoresist layer structured with the aid of the customary lithography technique, the photoresist layer is heated briefly, in the region of the interface with the semiconductor substrate, to a temperature above the melting point to fuse the photoresist layer at the interface with the layer underneath on the semiconductor wafer.

REFERENCES:
patent: 3716390 (1973-02-01), Garbarini
patent: 4606994 (1986-08-01), Illers et al.
patent: 2 339 479 (2000-01-01), None

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