Treating surface of low-dielectric constant material to...

Details Treating surface of low-dielectric constant material to... Treating surface of low-dielectric constant material to...

2005-08-16

2005-08-16

Potter, Roy (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000

Reexamination Certificate

active

06930033

ABSTRACT:
The present invention discloses a method including providing a substrate; forming a dielectric material over the substrate; forming an opening in the dielectric material; treating a surface of the dielectric material; forming a conductor in the opening; and planarizing the conductor.The present invention further discloses a structure including a substrate; a dielectric material located over the substrate, the dielectric material having a low dielectric constant; an opening located in the dielectric material; a treated layer located over a sidewall of the opening; and a conductor located in the opening and over the treated layer.

REFERENCES:
patent: 6417098 (2002-07-01), Wong et al.
patent: 6603204 (2003-08-01), Gates et al.

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