Semiconductor device having a ghost source/drain region and...

Details Semiconductor device having a ghost source/drain region and... Semiconductor device having a ghost source/drain region and...

2005-03-08

2005-03-08

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S372000, C257S294000, C257S395000, C257S396000, C257S397000

Reexamination Certificate

active

06864547

ABSTRACT:
The present invention provides a semiconductor device and a method of manufacture therefor. The semiconductor device includes a channel region located in a semiconductor substrate and a trench located adjacent a side of the channel region. The semiconductor device further includes an isolation structure located in the trench, and a source/drain region located over the isolation structure.

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