Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-20
2005-09-20
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S014000, C438S048000, C257S285000, C257S286000
Reexamination Certificate
active
06946378
ABSTRACT:
A method for fabricating a protective structure for bond wires of a semiconductor device assembly which includes sequentially fabricating one or more layers of the protective structure. After a first layer is formed, each subsequent layer is superimposed upon, contiguous with, and mutually adhered to an underlying layer of the protective structure. Such structure may be used to protect the bond wires of a test apparatus, which connect the contact pads of a carrier substrate of the test apparatus to corresponding bond pads of a test substrate. In addition, a fence member may be assembled with or formed on the test substrate to align and receive a semiconductor device and, thereby, to facilitate assembly of the semiconductor device with the test substrate. The fence member can be formed integrally with the protective structures or secured over the protective structures. Stereolithographic processes may be used to fabricate the fence member.
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Le Dung A.
Micro)n Technology, Inc.
TraskBritt
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