Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

2005-03-15

2005-03-15

Norton, Nadine G. (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S694000, C438S696000, C438S699000, C438S700000

Reexamination Certificate

active

06867139

ABSTRACT:
A semiconductor device manufacturing method wherein a via-hole is formed in an second inter-layer insulating film covering a lower layer wiring, throughout a surface of which are then formed a barrier film made of Ta (tantalum) and a Cu (copper) film sequentially, after which, first an unnecessary part of the Cu film is removed by a CMP (Chemical Mechanical Polishing) method using such a polishing liquid to which hydrogen peroxide is added by 1.5 weight-percent or more (first polishing step) and then an unnecessary part of the barrier film is removed by a CMP method for using a polishing liquid to which hydrogen peroxide is added by 0.09-1.5 weight-percent and applying a pressure of 4-10 Psi (pounds per square inch) on the barrier film (second polishing step).

REFERENCES:
patent: 6123088 (2000-09-01), Ho
patent: 6509273 (2003-01-01), Imai et al.
patent: 6579153 (2003-06-01), Uchikura et al.
patent: 2000-068272 (2000-03-01), None
patent: 2000-277612 (2000-10-01), None

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