Thick gate oxide transistor and electrostatic discharge...

Details Thick gate oxide transistor and electrostatic discharge... Thick gate oxide transistor and electrostatic discharge...

2005-03-08

2005-03-08

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S360000, C257S361000

Reexamination Certificate

active

06864537

ABSTRACT:
An electrostatic discharge (ESD) protection circuit includes a transistor with a gate electrode isolated from the semiconductor substrate by a thick oxide, a collector clamp coupled with a pad and the gate electrode, and an emitter clamp coupled between the gate electrode and the emitter of the transistor. Until the pad voltage reaches a trigger voltage, the collector clamp does not conduct, thereby preventing the transistor from conducting. However, when the pad voltage reaches the trigger voltage, the collector clamp turns on and triggers the latching of a parasitic thyristor that exists in the structure of the transistor. The latched parasitic thyristor (and thus the transistor) begins to conduct and rapidly dissipates the charge at the pad.

REFERENCES:
patent: 4109274 (1978-08-01), Belenkov et al.
patent: 4605980 (1986-08-01), Hartranft et al.
patent: 4745450 (1988-05-01), Hartranft et al.
patent: 4807080 (1989-02-01), Clark
patent: 5162888 (1992-11-01), Co et al.
patent: 5374844 (1994-12-01), Moyer
patent: 5424226 (1995-06-01), Vo et al.
patent: 5504444 (1996-04-01), Neugebauer
patent: 5528188 (1996-06-01), Au et al.
patent: 5537075 (1996-07-01), Miyazaki
patent: 5546038 (1996-08-01), Croft
patent: 5571737 (1996-11-01), Sheu et al.
patent: 5578860 (1996-11-01), Costa et al.
patent: 5602404 (1997-02-01), Chen et al.
patent: 5631793 (1997-05-01), Ker et al.
patent: 5753920 (1998-05-01), Buehler et al.
patent: 5844280 (1998-12-01), Kim
patent: 5870268 (1999-02-01), Lin et al.
patent: 5959488 (1999-09-01), Lin et al.
patent: 6013942 (2000-01-01), Soderbarg et al.
patent: 6064109 (2000-05-01), Blanchard et al.
patent: 6064249 (2000-05-01), Duvvury et al.
patent: 6097235 (2000-08-01), Hsu et al.
patent: 6194764 (2001-02-01), Gossner et al.
patent: 6225649 (2001-05-01), Minato
patent: 6320232 (2001-11-01), Gossner et al.
patent: 6414532 (2002-07-01), Su et al.
patent: 6437419 (2002-08-01), Bhalla et al.
patent: 6469560 (2002-10-01), Chang et al.
patent: 6507471 (2003-01-01), Colclaser et al.
patent: WO 9630936 (1996-10-01), None
Antinone, Robert J. et al., “Electrical Overstress Protection For Electronic Devices,” Noyes Publications, pp. 17-26.
Pendharkar, Sameer et al., “SCR-LDMOS—A Novel LDMOS Device With ESD Robustness,” 2000 IEEE, pp. 341-344.
Wang, Albert Z.H. et al., “An On-Chip ESD Protection Circuit with Low Trigger Voltage in BiCMOS Technology,” IEEE Journal of Solid-State Circuits, vol. 36, No. 1, Jan. 2001, pp. 40-45.
Antinone, Robert J. et al., “Electrical Overstress Protection For Electronic Devices,” Park Ridge, N.J., U.S.A.: Noyes Publications, 1986, pp. 17-26.
Iwamuro, N. et al., “Switching Loss Analysis Of Shorted Drain Non Punch-Through And Punch-Through Type IGBTS In Voltage Resonant Circuit,” 3rdInternational Symposium on Power Semiconductor Devices and ICS, ISPSD '91, Apr. 22-24, 1991, pp. 220-225.
Simpson, M. R. et al., “Analysis Of The Lateral Insulated Gate Transistor,” International Electron Devices meeting, Washington, D.C., Dec. 1-4, 1985, pp. 740-743.
Charvaka Duvvury et al. “Substrate Pump NMOS for ESD Protection Applications,” Silicon Technology Development, Texas Instruments, Dallas, Texas, 11 pages. (unknown date).

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