Semiconductor integrated circuit device having body biasing...

Details Semiconductor integrated circuit device having body biasing... Semiconductor integrated circuit device having body biasing...

2005-03-08

2005-03-08

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S372000, C257S901000, C327S534000

Reexamination Certificate

active

06864539

ABSTRACT:
A semiconductor integrated circuit device has a MISFET and a body biasing circuit. The MISFET has a source electrode and a drain electrode of a first conductivity type and a gate electrode, and the MISFET is formed in a well of a second conductivity type. The body biasing circuit generates a voltage in the well by passing a prescribed current in a forward direction into a diode which is formed from the well and the source electrode of the MISFET.

REFERENCES:
patent: 6469572 (2002-10-01), Bruneau et al.
patent: 6515534 (2003-02-01), Dabral
patent: 2001-345424 (2001-12-01), None
S. Narendra et al., “1.1V 1GHz Communications Router with On-Chip Body Bias 150nm CMOS,” ISSCC 2002/Session 16/High Speed I/O 16.4, pp. 270, 271,466, Feb. 2002.
Kanda et al., “Design Impact of Positive Temperature Dependence on Drain Current in Sub-1-V CMOS VLSIs,” IEEE J. Solid-State Circuits, vol. 36, No. 10, pp. 1559-1564, Oct. 2001.

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