Reduced size plate layer improves misalignments for CUB DRAM

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S296000

Reexamination Certificate

active

06873001

ABSTRACT:
In a DRAM array using a capacitor-under-bitline (CUB) layout, the plate layer of the capacitor is significantly reduced in area to reduce misalignments in connections between the bitline and the underlying transistors.

REFERENCES:
patent: 6020235 (2000-02-01), Chang

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