Electrically programmable three-dimensional memory

Details Electrically programmable three-dimensional memory Electrically programmable three-dimensional memory

2005-03-01

2005-03-01

Ngô, Ngân V. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000

Reexamination Certificate

active

06861715

ABSTRACT:
One greatest advantage of the three-dimensional memory (3D-M) is its integratibility. In a electrically programmable three-dimensional integrated memory (EP-3DiM), an electrically programmable 3D-M (EP-3DM) is integrated with an embedded RWM and/or an embedded processor. Collectively, the EP-3DiM excels in speed, density/cost, programmability and data security.

REFERENCES:
patent: 4381201 (1983-04-01), Sakurai
patent: 5383149 (1995-01-01), Hong
patent: 5500544 (1996-03-01), Park et al.

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