Semiconductor device and method for fabricating the same

Details Semiconductor device and method for fabricating the same Semiconductor device and method for fabricating the same

2005-08-02

2005-08-02

Thomas, Tom (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S532000, C257S534000, C257S296000, C257S300000, C257S308000

Reexamination Certificate

active

06924526

ABSTRACT:
The semiconductor device comprises a capacitor including a storage electrode76, a capacitor dielectric film formed on the storage electrode76, and a plate electrode formed on the capacitor dielectric film78, the storage electrode76having an upper end rounded and having a larger thickness at the upper end than a thickness in the rest region. Whereby electric field concentration on the upper end of the storage electrode can be mitigated, and leakage current increase and dielectric breakdown of the capacitor dielectric film can be precluded.

REFERENCES:
patent: 5023683 (1991-06-01), Yamada
patent: 5108943 (1992-04-01), Sandhu et al.
patent: 5481127 (1996-01-01), Ogawa
patent: 6380579 (2002-04-01), Nam et al.
patent: Hei 05-110025 (1993-04-01), None
patent: Hei 05-114711 (1993-05-01), None
patent: Hei 08-181231 (1996-07-01), None
patent: Hei 09-181278 (1997-07-01), None
patent: Hei 10-050949 (1998-02-01), None
patent: 10-050949 (1998-02-01), None

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