Power switching transistor with low drain to gate capacitance

Details Power switching transistor with low drain to gate capacitance Power switching transistor with low drain to gate capacitance

2005-03-22

2005-03-22

Loke, Steven (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S342000

Reexamination Certificate

active

06870221

ABSTRACT:
A transistor (10) is formed on a semiconductor substrate (12) with a first surface (19) for forming a channel (40). A gate dielectric (22) has a first thickness overlying a first portion of the channel, and a dielectric film (20) overlies a second portion of the channel and has a second thickness greater than the first thickness. The second thickness reduces the drain to gate capacitance of the transistor, thereby improving its switching speed and frequency response.

REFERENCES:
patent: 4376286 (1983-03-01), Lidow et al.
patent: 4593302 (1986-06-01), Lidow et al.
patent: 4642666 (1987-02-01), Lidow et al.
patent: 4680853 (1987-07-01), Lidow et al.
patent: 4705759 (1987-11-01), Lidow et al.
patent: 4789882 (1988-12-01), Lidow
patent: 4959699 (1990-09-01), Lidow et al.
patent: 4974059 (1990-11-01), Kinzer
patent: 5008725 (1991-04-01), Lidow et al.
patent: 5130767 (1992-07-01), Lidow et al.
patent: 5191396 (1993-03-01), Lidow et al.
patent: 5338961 (1994-08-01), Lidow et al.
patent: 5396097 (1995-03-01), Robb et al.
patent: 6262453 (2001-07-01), Hshieh
patent: 0050773 (1981-09-01), None
patent: 0586835 (1984-03-01), None
patent: 0119400 (1984-09-01), None

Affiliated with

Also associated with

Rating

Power switching transistor with low drain to gate capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Power switching transistor with low drain to gate capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Power switching transistor with low drain to gate capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3442696