SOI component

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2005-03-29

2005-03-29

Prenty, Mark V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S487000, C257S343000

Reexamination Certificate

active

06873012

ABSTRACT:
A semiconductor component has a semiconductor substrate, an insulation layer located on the semiconductor substrate, and a semiconductor layer that is arranged on the insulation layer. A first doped terminal zone, a second doped terminal zone, and a drift zone are formed in the semiconductor layer between the first and second terminal zones. At least one of the first and second terminal zones directly adjoins the semiconductor substrate.

REFERENCES:
patent: 5648671 (1997-07-01), Merchant
patent: 6097063 (2000-08-01), Fujihira
patent: 6121661 (2000-09-01), Assaderaghi et al.
patent: 6153912 (2000-11-01), Holst
patent: 6221737 (2001-04-01), Letavic et al.
patent: 197 02 102 (1997-07-01), None
patent: 0 497 427 (1992-08-01), None

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