Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2005-08-02

2005-08-02

Wilson, Allan R. (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S072000, C257S335000, C257S336000, C257S353000, C257S344000, C257S408000, C257S346000, C257S022000, C257S027000, C257S066000, C257S330000, C257S332000

Reexamination Certificate

active

06924528

ABSTRACT:
In a bottom gate type semiconductor device made of a semiconductor layer with crystal structure, source/drain regions are constructed by a lamination layer structure including a first conductive layer (n+layer), a second conductive layer (n−layer) having resistance higher than the first conductive layer, and an intrinsic or substantially intrinsic semiconductor layer (i layer). At this time, the n−layer acts as LDD region, and the i layer acts as an offset region is a film thickness direction.

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