Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making
Reexamination Certificate
2005-03-15
2005-03-15
Chu, John S. (Department: 1752)
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Radiation sensitive composition or product or process of making
C430S272100, C430S275100, C430S326000
Reexamination Certificate
active
06866982
ABSTRACT:
A resist composition comprising (A) a substantially alkali-insoluble polymer having acidic functional groups protected with acid labile groups, which becomes alkali soluble upon elimination of the acid labile groups, (B) a photoacid generator, and (C) a nonionic fluorinated organosiloxane compound consisting of perfluoroalkyl-containing siloxane bonds and polyoxyethylene type polyether bonds is exposed to UV having a wavelength of at least 150 nm and developed with an alkaline solution to form a pattern without leaving scum.
REFERENCES:
patent: 6303264 (2001-10-01), Fujie et al.
patent: 6432608 (2002-08-01), Fujie et al.
patent: 0 887 707 (1998-12-01), None
patent: 3-47190 (1991-02-01), None
patent: 6-118660 (1994-04-01), None
patent: 11-30856 (1999-02-01), None
patent: 11-30865 (1999-02-01), None
patent: 11-109629 (1999-04-01), None
patent: 11-352700 (1999-12-01), None
Fujii Toshihiko
Hirano Yoshinori
Kato Hideto
Yamaguchi Hiromasa
Birch & Stewart Kolasch & Birch, LLP
Chu John S.
Shin-Etsu Chemical Co. , Ltd.
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