Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2005-01-11
2005-01-11
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S515000, C438S516000
Reexamination Certificate
active
06841460
ABSTRACT:
A method is provided for turning off MOS transistors through an anti-code (type) LDD implant without the need for high energy implant that causes poly damage. The method also negates any deleterious effects due to the variations in the thickness of the poly gate. The anti-code LDD implant can be performed vertically, or at a tilt angle, or in a combination of vertical and tilt angle. The method can be made part of a Flash-ROM process that is applicable to both polycide and silicide processes.
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Cho Shu-Ying
Chung Chien-Ming
Huang Yuan-Chang
Wang Chien-Chung
Lindsay Jr. Walter L.
Niebling John F.
Taiwan Semiconductor Manufacturing Company
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