Three-mask method of constructing the final hard mask used...

Details Three-mask method of constructing the final hard mask used... Three-mask method of constructing the final hard mask used...

2005-10-04

2005-10-04

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S283000

Reexamination Certificate

active

06951784

ABSTRACT:
Presented is a three-mask method of constructing the final hard mask used for etching the silicon fins and the source/drain silicon regions for FinFETs, and silicon mesas for non-FinFET devices such as resistors, diodes, and capacitors. More specifically, a first mask is used to create a mandrel; a second mask is used to pattern the mandrel's sidewall spacers; and a third mask is used to pattern the box-shaped structures that are connected by one of the sidewall spacers. An alignment of the gate conductor to the box-shaped structures is provided.

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