Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2005-10-25

2005-10-25

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S692000

Reexamination Certificate

active

06958293

ABSTRACT:
The invention provides a method for manufacturing a semiconductor device by which product performance and working efficiency can be improved while increasing a capacitor area of cross-point FeRAM. By using a first mask formed on a lower electrode layer forming film, a lower electrode is formed and processed and the lower electrode2A can be exposed on a first insulating layer. By using a second mask formed on an upper electrode supporting layer forming film, a ferroelectric layer and an upper electrode supporting layer can be formed and processed and the upper electrode supporting layer can be exposed on a second insulating layer.

REFERENCES:
patent: 6773929 (2004-08-01), Oh et al.
patent: 6841396 (2005-01-01), Celii et al.
patent: 6841919 (2005-01-01), Akahane et al.
patent: A 08-316430 (1996-11-01), None
patent: A 10-223855 (1998-08-01), None
patent: A 2001-015697 (2001-01-01), None
Hayashi, Takahisa et al., “A Novel Stack Capacitor cell for High Density FeRAM Compatible with CMOS Logic”, IEEE, 2002, Japan.

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