Information storage apparatus and manufacturing method therefor

Details Information storage apparatus and manufacturing method therefor Information storage apparatus and manufacturing method therefor

2005-01-11

2005-01-11

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S298000, C257S301000, C257S303000, C257S306000, C257S324000, C438S003000, C438S240000

Reexamination Certificate

active

06841820

ABSTRACT:
The invention achieves the fine processing of an information writing device, which includes a multilayered element obtained by stacking ferromagnetic/semiconductor/ferromagnetic layers, without increasing the resistivity and power consumption of the device and lowering the reliability thereof. The invention provides an information storage apparatus (1) having write word lines (11), bit lines (21) formed in such a way as to intersect with the write word lines (11) at predetermined intervals, and information storage devices (31) each comprising a multilayered film including a magnetic layer provided in an intersection region, in which each of the write word lines (11) intersects with an associated one of the bit lines (21), between the write word lines (11) and the bit lines (21). The information storage devices (31) each have a concave portion (54), which is provided in a second insulating film (53) formed between the write word line (11) and the bit line (21) in the intersection region between the word line (11) and the bit line (21), and a multilayered film including at least a magnetic layer formed in the concave portion (54).

REFERENCES:
patent: 6104633 (2000-08-01), Abraham et al.
patent: 6535453 (2003-03-01), Nii et al.
patent: 2001-168418 (2001-06-01), None
patent: 2001168418 (2001-06-01), None

Affiliated with

Also associated with

Rating

Information storage apparatus and manufacturing method therefor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Information storage apparatus and manufacturing method therefor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Information storage apparatus and manufacturing method therefor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3438223