Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-11
2005-01-11
Wille, Douglas (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S392000
Reexamination Certificate
active
06841835
ABSTRACT:
MOS transistor cells1and MOS transistor cells2having different gate threshold voltages are formed on a chip8. The MOS transistor cells1, 2having the different gate threshold voltages are connected in parallel.
REFERENCES:
patent: 4937075 (1990-06-01), Hollingsworth et al.
patent: 6653693 (2003-11-01), Makino
patent: 11-307650 (1999-11-01), None
patent: 2001-36388 (2001-02-01), None
patent: 2002-16238 (2002-01-01), None
Funai Electric Co. Ltd.
Osha & May L.L.P.
Wille Douglas
LandOfFree
MOS transistor and switching power supply does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with MOS transistor and switching power supply, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and MOS transistor and switching power supply will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3437673