MOS transistor and switching power supply

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S392000

Reexamination Certificate

active

06841835

ABSTRACT:
MOS transistor cells1and MOS transistor cells2having different gate threshold voltages are formed on a chip8. The MOS transistor cells1, 2having the different gate threshold voltages are connected in parallel.

REFERENCES:
patent: 4937075 (1990-06-01), Hollingsworth et al.
patent: 6653693 (2003-11-01), Makino
patent: 11-307650 (1999-11-01), None
patent: 2001-36388 (2001-02-01), None
patent: 2002-16238 (2002-01-01), None

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