Semiconductor memory device having a low potential body section

Details Semiconductor memory device having a low potential body section Semiconductor memory device having a low potential body section

2005-03-01

2005-03-01

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S348000, C257S349000

Reexamination Certificate

active

06861708

ABSTRACT:
This semiconductor device is provided with a wiring called a body line (BDL), a body section of a memory cell transistor is connected to this body line (BDL), and a potential of the body section is controlled by a body section controller connected to the body line. As a result, it is possible to propose a novel structure capable of keeping the potential of the body section low and to provide a semiconductor device and a manufacturing method therefor, capable of improving operation performance by contriving circuit operation.

REFERENCES:
patent: 5148393 (1992-09-01), Furuyama
patent: 5821769 (1998-10-01), Douseki
patent: 6104061 (2000-08-01), Forbes et al.
patent: 6111778 (2000-08-01), MacDonald et al.
patent: 6191470 (2001-02-01), Forbes et al.
patent: 6458638 (2002-10-01), Kim
patent: 6538916 (2003-03-01), Ohsawa
patent: 6624476 (2003-09-01), Chan et al.
patent: 6646305 (2003-11-01), Assaderaghi et al.
patent: 6670675 (2003-12-01), Ho et al.
patent: 6677676 (2004-01-01), Wada et al.
patent: 11-87728 (1999-03-01), None
Stephen C. Kuehne et al., “SOI MOSFET with Buried Body Strap by Wafer Bonding,” IEEE Transactions on Electron Devices, May 1998, pp. 1084-1091, vol. 45, No. 5.

Affiliated with

Also associated with

Rating

Semiconductor memory device having a low potential body section does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor memory device having a low potential body section, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor memory device having a low potential body section will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3437077