Nonvolatile semiconductor memory and method of operating the...

Details Nonvolatile semiconductor memory and method of operating the... Nonvolatile semiconductor memory and method of operating the...

2005-10-04

2005-10-04

Zarneke, David (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S288000, C257S315000, C257S316000

Reexamination Certificate

active

06952031

ABSTRACT:
A nonvolatile semiconductor memory having a memory cell comprises: a semiconductor substrate having a pair of trenches formed on a surface thereof; first electrodes formed in a pair of trenches through the intervention of a first insulating film, respectively; a second electrode formed on the semiconductor substrate between the trenches through the intervention of a second insulating film; and a third electrode formed on the second electrode through the intervention of a third insulating film.

REFERENCES:
patent: 6034894 (2000-03-01), Maruyama et al.
patent: 2003/0117845 (2003-06-01), Yamauchi
patent: 2003/0124803 (2003-07-01), Ueda et al.
patent: 11-054732 (1999-02-01), None
patent: 2001-284555 (2001-10-01), None
Kume et al; A 1.28m2 Contactless Memory Cell Technology for a 3V-Only 64Mbit EEPROM; IEDM 92, pp. 991-993, 1992.

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