Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Polycrystalline semiconductor
Reexamination Certificate
2005-04-05
2005-04-05
Flynn, Nathan J. (Department: 2826)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Polycrystalline semiconductor
C438S482000, C438S479000
Reexamination Certificate
active
06875675
ABSTRACT:
An a-Si film formed on an insulating substrate is irradiated with a laser to obtain a p-Si film, which is then exposed to an oxidation atmosphere to form a surface oxide film. The surface oxide film is then removed to reduce the height of a projection generated on the surface of the p-Si film, thereby planarizing the surface of the p-Si film.
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Andújar Leonardo
Cantor & Colburn LLP
Flynn Nathan J.
Sanyo Electric Co,. Ltd.
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