Mask for sequential lateral solidification and...

Details Mask for sequential lateral solidification and... Mask for sequential lateral solidification and...

2005-03-15

2005-03-15

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

C438S701000, C438S713000, C438S719000, C438S764000, C438S798000

Reexamination Certificate

active

06867151

ABSTRACT:
A method of forming a polycrystalline silicon layer includes: disposing a mask over the amorphous silicon layer, the mask having a plurality of transmissive regions, the plurality of transmissive regions being disposed in a stairstep arrangement spaced apart from each other in a first direction and a second direction substantially perpendicular from the first direction, each transmissive region having a central portion and first and second side portions that are adjacent to opposite ends of the central portion along the first direction, and wherein each of the portions has a length along the first direction and a width along the second direction, and wherein the width of first and second portions decreases away from the central portion along the first direction; irradiating a laser beam onto the amorphous silicon layer a first time through the mask to form a plurality of first irradiated regions corresponding to the plurality of transmissive regions, each first irradiated region having a central portion, and first and second side portions at both sides of the central portion; moving the substrate and the mask relative to one another such that the first side portion of each transmissive region overlaps the central portion of each first irradiated region; and irradiating the laser beam onto the amorphous silicon layer a second time through the mask to form a plurality of second irradiated regions corresponding to the plurality of transmissive regions.

REFERENCES:
patent: 6177301 (2001-01-01), Jung
patent: 6316338 (2001-11-01), Jung
patent: 6326286 (2001-12-01), Park et al.
patent: 6726768 (2004-04-01), Yoon
patent: 6741621 (2004-05-01), Asano
patent: 20020179004 (2002-12-01), Jung
patent: 20020179959 (2002-12-01), Fuji et al.
patent: 20030022421 (2003-01-01), Shimoto et al.
patent: 2001-25694 (2002-11-01), None
patent: 2001-30698 (2002-12-01), None

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