Silicon single crystal, silicon wafer, and epitaxial wafer

Details Silicon single crystal, silicon wafer, and epitaxial wafer Silicon single crystal, silicon wafer, and epitaxial wafer

2005-04-12

2005-04-12

Stein, Stephen (Department: 1775)

Stock material or miscellaneous articles

Composite

Of silicon containing

C428S064100, C428S450000, C117S930000, C117S931000, C423S348000

Reexamination Certificate

active

06878451

ABSTRACT:
There are provided silicon single crystal, silicon wafer, and epitaxial wafer having a sufficient gettering effect suitable for a large-scale integrated device. The silicon single crystal which is suitable for an epitaxial wafer is grown with nitrogen doping at a concentration of 1×1013atoms/cm3or more, or with nitrogen doping at a concentration of 1×1012atoms/cm3and carbon doping at a concentration of 0.1×1016-5×1016atoms/cm3and/or boron doping at a concentration of 1×1017atoms/cm3or more. The silicon wafer is produced by slicing from the silicon single crystal, and an epitaxial layer is grown on a surface of the silicon wafer to produce the epitaxial wafer. The present invention provides an epitaxial wafer for a large-scale integrated device having no defects in a device-active region and having an excellent gettering effect without performance of an extrinsic or intrinsic gettering treatment, which is a factor for increasing the number of production steps and production costs.

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