Semiconductor device including low-resistance wires...

Details Semiconductor device including low-resistance wires... Semiconductor device including low-resistance wires...

2005-03-08

2005-03-08

Pham, Long (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S774000

Reexamination Certificate

active

06864545

ABSTRACT:
A plurality of N-type first impurity layers (111) are provided that form stripes in a main surface (110S) of a P-type semiconductor substrate (110). At least one N-type second impurity layer (112) overlaps (or touches) one of the first impurity layers (111). A plurality of gate electrodes are provided on a gate insulating film (121). A plurality of gate electrodes form stripes crossing the first impurity layers (111). A plurality of low-resistance wires (140) are provided on an interlayer insulating film (122). The plurality of low-resistance wires (140) form stripes extending in the same direction as that of the first impurity layers (111). An end (123T2) of each contact plug (123) is entirely in contact with the second impurity layer112, and does not touch a P-type region of the semiconductor substrate (110).

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patent: 5768192 (1998-06-01), Eitan
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patent: 8-32035 (1996-02-01), None

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