Method of forming a thin oxide layer having improved...

Details Method of forming a thin oxide layer having improved... Method of forming a thin oxide layer having improved...

2005-05-31

2005-05-31

Fourson, George (Department: 2823)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Implanting to form insulator

C438S407000, C438S766000, C438S770000, C438S773000, C438S798000, C438S966000

Reexamination Certificate

active

06900111

ABSTRACT:
A method for forming a reliable and ultra-thin oxide layer, such as a gate oxide layer of an MOS transistor, comprises an annealing step immediately performed prior to oxidizing a substrate. The annealing step is performed in an inert gas ambient to avoid oxidation of the semiconductor surface prior to achieving a required low oxidizing temperature. Preferably, the annealing step and the oxidizing step are carried out as an in situ process, thereby minimizing the thermal budget of the overall process.

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