High performance logic and high density embedded dram with...

Details High performance logic and high density embedded dram with... High performance logic and high density embedded dram with...

2005-03-29

2005-03-29

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S296000, C257S330000, C438S241000, C438S275000, C438S279000

Reexamination Certificate

active

06873010

ABSTRACT:
An integrated circuit includes memory cells having array transistors separated by minimum lithographic feature and unsilicided metal bit lines encapsulated by a diffusion barrier while high performance logic transistors may be formed on the same chip without compromise of performance including an effective channel, silicided contacts for low source/drain contact resistance, extension and halo implants for control of short channel effects and a dual work function semiconductor gate having a high impurity concentration and correspondingly thin depletion layer thickness commensurate with state of the art gate dielectric thickness. This structure is achieved by development of thick/tall structures of differing materials using a mask or anti-spacer, preferably of an easily planarized material, and using a similar mask planarized to the height of the structures of differing materials to decouple substrate and gate implantations in the logic transistors.

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